Electric field dependence of photocurrent absorption in GeSi/Si quantum wells

✍ Scribed by S.H Huang; H Zhou; Z.M Jiang; F Lu

• Book ID: 104305866
• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 115 KB
• Volume: 66
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(03)00037-6

✦ Synopsis

In this paper, Ge Si / Si quantum well films grown by molecular beam epitaxy were used to study the 0.4 0.6 electric field effects of absorption spectrum. The absorption spectra of Ge Si / Si quantum wells under 0.4 0.6 electric field were investigated by photocurrent measurements. We have observed that photocurrent absorption peaks from quantum wells shift to lower energy with increasing electric field. According to the variational calculation methods, we have calculated the field-induced energy shifts in finite quantum well and experimental results are in agreement with the theoretical calculation results using variational calculation method.