Eisenspuren in Indium und Gallium
β Scribed by S. Eckhard
- Book ID
- 112328855
- Publisher
- Springer
- Year
- 1963
- Tongue
- English
- Weight
- 86 KB
- Volume
- 194
- Category
- Article
- ISSN
- 1618-2650
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π SIMILAR VOLUMES
Treatment of GaMe 3 with one equivalent of HO c Hex in toluene at 20 Β°C leads to [Me 2 GaO c Hex] 2 (4) under evolution of methane. The reaction of InMe 3 with two equivalents of HO c Hex leads under similar conditions not to [MeIn(O c Hex) 2 ] n but to the sesquialkoxide [In{Me 2 In(O c Hex) 2 } 3
Die Reaktionen von Trimethylgdllium-und Trimethylindium-Atherat rnit Trimethyl-und Triphenylsilanol fuhren unter Methan-Entwicklung und Freisetzung des koordinativ gebundenen Athers zu den Pentdorganogallo-bzw. -indo-siloxanen [(CH3)3Si-O -Ga(CH3)2]2, [(CH&Si -0 --In(CH3)2]2, [(CsH&Si-O -Ga(CH3)2]2