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Eisenspuren in Indium und Gallium

✍ Scribed by S. Eckhard


Book ID
112328855
Publisher
Springer
Year
1963
Tongue
English
Weight
86 KB
Volume
194
Category
Article
ISSN
1618-2650

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Treatment of GaMe 3 with one equivalent of HO c Hex in toluene at 20 Β°C leads to [Me 2 GaO c Hex] 2 (4) under evolution of methane. The reaction of InMe 3 with two equivalents of HO c Hex leads under similar conditions not to [MeIn(O c Hex) 2 ] n but to the sesquialkoxide [In{Me 2 In(O c Hex) 2 } 3

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Die Reaktionen von Trimethylgdllium-und Trimethylindium-Atherat rnit Trimethyl-und Triphenylsilanol fuhren unter Methan-Entwicklung und Freisetzung des koordinativ gebundenen Athers zu den Pentdorganogallo-bzw. -indo-siloxanen [(CH3)3Si-O -Ga(CH3)2]2, [(CH&Si -0 --In(CH3)2]2, [(CsH&Si-O -Ga(CH3)2]2