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Sesquialkoxide von Gallium und Indium

✍ Scribed by Soheila Chitsaz; Effat Iravani; Bernhard Neumüller


Publisher
John Wiley and Sons
Year
2002
Tongue
German
Weight
121 KB
Volume
628
Category
Article
ISSN
0372-7874

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✦ Synopsis


Treatment of GaMe 3 with one equivalent of HO c Hex in toluene at 20 °C leads to [Me 2 GaO c Hex] 2 (4) under evolution of methane. The reaction of InMe 3 with two equivalents of HO c Hex leads under similar conditions not to [MeIn(O c Hex) 2 ] n but to the sesquialkoxide [In{Me 2 In(O c Hex) 2 } 3 ] (5). 5 can be described also as [{Me 2 InO c Hex)} 2 {MeIn(O c Hex) 2 } 2 ]

. The use of an excess of cyclohexanol in boiling toluene gives the same result. Under these reflux conditions, the reaction of GaMe 3 with an excess of PhCH 2 OH leads exclusively to another type of sequialkoxides, [Ga{MeGa(OCH 2 Ph) 3 } 3 ] (6). 4 Ϫ 6 were characterized by NMR, vibrational and MS spectra, as well as by X-ray structure determinations. According to this, 4 forms centrosymmetrical and therefore


📜 SIMILAR VOLUMES


Heterosiloxane des Galliums und Indiums
✍ Schmidbaur, Hubert ;Schindler, Fritz 📂 Article 📅 1966 🏛 Wiley (John Wiley & Sons) 🌐 English ⚖ 498 KB

Die Reaktionen von Trimethylgdllium-und Trimethylindium-Atherat rnit Trimethyl-und Triphenylsilanol fuhren unter Methan-Entwicklung und Freisetzung des koordinativ gebundenen Athers zu den Pentdorganogallo-bzw. -indo-siloxanen [(CH3)3Si-O -Ga(CH3)2]2, [(CH&Si -0 --In(CH3)2]2, [(CsH&Si-O -Ga(CH3)2]2