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Efficient improvement of hot carrier-induced degradation for 0.1-μm indium-halo nMOSFET

✍ Scribed by Wen-Kuan Yeh; Jung-Chun Lin

Book ID: 114617370
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 222 KB
Volume: 51
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2004.823797

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