Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN
β Scribed by Nishida, Toshio; Saito, Hisao; Kobayashi, Naoki
- Book ID
- 120939660
- Publisher
- American Institute of Physics
- Year
- 2001
- Tongue
- English
- Weight
- 277 KB
- Volume
- 79
- Category
- Article
- ISSN
- 0003-6951
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π SIMILAR VOLUMES
Ten-milliwatt output at 352 nm wavelength is obtained in the room-temperature cw operation of an AlGaN-based ultraviolet light emitting diode. The maximum internal quantum efficiency is estimated to be more than 80%. We also demonstrate the excitation of fluorescence of three basal colors by this wa
## Abstract We demonstrated activation annealing of Mgβdoped pβtype Al~0.17~Ga~0.83~N in different gases. The hole concentration of Al~0.17~Ga~0.83~N annealed in oxygen is higher than that annealed in nitrogen or air. A hole concentration of 1.3βΓβ10^16^βcm^β3^ at room temperature was achieved by a