The neutron transmutation doping technique has been used to introduce controlled amounts of shallow donor tin impurities in nominally undoped InP substrates. Both optical (Raman scattering) and electrical (Hall effect) methods were applied for characterization purposes. From the analysis of the Rama
✦ LIBER ✦
Efficiency of neutron transmutation doping of InP investigated by optical and electrical methods
✍ Scribed by B. Boudart; B. Marí; B. Prévot; C. Schwab
- Book ID
- 113282658
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 448 KB
- Volume
- 63
- Category
- Article
- ISSN
- 0168-583X
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