𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Efficiency of neutron transmutation doping of InP investigated by optical and electrical methods

✍ Scribed by B. Boudart; B. Marí; B. Prévot; C. Schwab


Book ID
113282658
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
448 KB
Volume
63
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Effective n-type doping of InP by the ne
✍ B. Mari; B. Prevot; C. Schwab 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 294 KB

The neutron transmutation doping technique has been used to introduce controlled amounts of shallow donor tin impurities in nominally undoped InP substrates. Both optical (Raman scattering) and electrical (Hall effect) methods were applied for characterization purposes. From the analysis of the Rama

Effects of deep levels and Si-doping on
✍ Q. Liu; U. Quedeweit; F. Scheffer; A. Lindner; W. Prost; F.J. Tegude 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 311 KB

Deep level characteristics in undoped and Si-doped Ga05tIn049P layers has been investigated using photocapacitance and photoluminescence (PL) methods. Ga0.5~In049P layers were grown by metalorganic vapor-phase epitaxy in the temperature range 600-730 °C and with doping levels from 3.9 x l0 w cm -~ t