Effective n-type doping of InP by the neutron transmutation technique

✍ Scribed by B. Mari; B. Prevot; C. Schwab

• Book ID: 103954407
• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 294 KB
• Volume: 20
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(93)90409-g

✦ Synopsis

The neutron transmutation doping technique has been used to introduce controlled amounts of shallow donor tin impurities in nominally undoped InP substrates. Both optical (Raman scattering) and electrical (Hall effect) methods were applied for characterization purposes. From the analysis of the Raman features, the resistivity of as-irradiated samples is shown to increase with the neutron fluence as a direct consequence of the inherent lattice damage (mainly point defects). After annealing at 550 °C, Hall measurements show that electron concentration values up to 10 TM cm -3 can be readily achieved in a controlled manner.