𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Effects of the inversion-layer centroid on the performance of double-gate MOSFETs

✍ Scribed by Lopez-Villanueva, J.A.; Cartujo-Cassinello, P.; Gamiz, F.; Banqueri, J.; Palma, A.J.


Book ID
114538003
Publisher
IEEE
Year
2000
Tongue
English
Weight
131 KB
Volume
47
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Accurate prediction of the volume invers
✍ Oana Moldovan; Ferney A. Chaves; David JimΓ©nez; Jean-Pierre Raskin; Benjamin IΓ±i πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 251 KB

## Abstract This paper demonstrates the capability of our previously published undoped Double‐Gate (DG) MOSFET explicit and analytical compact model to also forecast the effect of the volume inversion (VI) on the intrinsic capacitances. For that purpose, we present simulation results for these capa