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Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures

✍ Scribed by Aumer, M. E.; LeBoeuf, S. F.; Bedair, S. M.; Smith, M.; Lin, J. Y.; Jiang, H. X.


Book ID
120986473
Publisher
American Institute of Physics
Year
2000
Tongue
English
Weight
353 KB
Volume
77
Category
Article
ISSN
0003-6951

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