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Effects of substrate temperature and near-substrate plasma density on the properties of dc magnetron sputtered aluminum doped zinc oxide

โœ Scribed by Schmidt, Nathan W.; Totushek, Thomas S.; Kimes, William A.; Callender, David R.; Doyle, James R.

Book ID
127190562
Publisher
American Institute of Physics
Year
2003
Tongue
English
Weight
259 KB
Volume
94
Category
Article
ISSN
0021-8979

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dc reactive magnetron sputtering technique was employed for deposition of tantalum oxide films on quartz and silicon substrates by sputtering of pure tantalum target in the presence of oxygen and argon gases under various substrate temperatures in the range 303-973 K. The variation of cathode potent