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Effects of Si, Ge and Ar ion-implantation on EL from Au/Si-rich SiO2/p-Si structure

✍ Scribed by Y Chen; G.Z Ran; Y.K Sun; Y.B Wang; J.S Fu; Wen-tai Chen; Yi-yuan Gong; De-Xin Wu; Z.C Ma; W.H Zong; G.G Qin

Book ID
114164999
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
177 KB
Volume
183
Category
Article
ISSN
0168-583X

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XPS analysis and valence band structure
XPS analysis and valence band structure of a low-dimensional SiO2/Si system after Si+ ion implantation
✍ Zatsepin, D. A. ;Mack, P. ;Wright, A. E. ;Schmidt, B. ;Fitting, H.-J. πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 344 KB

## Abstract A X‐ray photoelectron spectroscopy (XPS) of valence band (VB) and core levels are performed for a SiO~2~/p‐Si heterostructure containing a thin oxide layer of __d__= 20 nm thickness and implanted by Si^+^ ions. With an implantation energy of 12 keV the maximum density of the implanted S