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Effects of RF power variation on properties of ZnO thin films and electrical properties of p–n homojunction

✍ Scribed by Deuk-Kyu Hwang; Kyu-Hyun Bang; Min-Chang Jeong; Jae-Min Myoung

Book ID: 108341944
Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 332 KB
Volume: 254
Category: Article
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(03)01205-3

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## Abstract Transparent conducting, aluminium doped zinc oxide thin films (ZnO:Al) were deposited by radio frequency (RF) magnetron sputtering. The RF power was varied from 60 to 350 W whereas the substrate temperature was kept at 160 °C. The structural, electrical and optical properties of the as‐