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Effects of Residence Time and Reaction Conditions on the Deposition of SiC from Methyltrichlorosilane and Hydrogen

✍ Scribed by Cuiying Lu; Laifei Cheng; Chunnian Zhao; Litong Zhang; Fang Ye


Book ID
114840557
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
371 KB
Volume
9
Category
Article
ISSN
1546-542X

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A comprehensive experimental investigation of the effects of hydrogen chloride concentration on the deposition rate and stoichiometry of SiC films produced through thermal decomposition of methyltrichlorosilane (MTS, CH 3 SiCl 3 ) is carried out in a gravimetric hot wall reactor of tubular geometry.