The e β ect of di β erent polarization orientations of the excitation source on the Raman and photoluminescence (PL) spectra of a porous silicon (PS) layer within two di β erent micro-regions was investigated. Two micro-regions (2 lm) along the (100) direction were studied, close to the crystalline sil
β¦ LIBER β¦
Effects of rare earth impurities on the photoluminescence spectra of p-type porous silicon
β Scribed by J. Torres; F. Fajardo
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 123 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1862-6351
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