Effect of light intensity on photoluminescence properties of n-type porous silicon
β Scribed by A Abouliatim; P Joubert; P Guyader
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 420 KB
- Volume
- 276
- Category
- Article
- ISSN
- 0040-6090
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π SIMILAR VOLUMES
The e β ect of di β erent polarization orientations of the excitation source on the Raman and photoluminescence (PL) spectra of a porous silicon (PS) layer within two di β erent micro-regions was investigated. Two micro-regions (2 lm) along the (100) direction were studied, close to the crystalline sil
We have fabricated porous silicon layers (PSLs) in the anodizing solution, HF(48wt.\%): \(\mathrm{H}_{2} \mathrm{O}=1: 1\). After anodization, the PSL was etched in the same chemical solution as used for anodization and then illuminated with the \(476.5 \mathrm{~nm}\) line, with a power of \(20 \mat