𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Effect of light intensity on photoluminescence properties of n-type porous silicon

✍ Scribed by A Abouliatim; P Joubert; P Guyader


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
420 KB
Volume
276
Category
Article
ISSN
0040-6090

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Polarization effects on the Raman and ph
✍ Walter Jaimes Salcedo; Francisco J. Ramirez Fernandez; Joel C. Rubim πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 235 KB πŸ‘ 2 views

The e †ect of di †erent polarization orientations of the excitation source on the Raman and photoluminescence (PL) spectra of a porous silicon (PS) layer within two di †erent micro-regions was investigated. Two micro-regions (2 lm) along the (100) direction were studied, close to the crystalline sil

Effect of chemical etching combined with
✍ J.Q. Duan; B.R. Zhang; L.Z. Zhang; J.C. Mao; G.G. Qin πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 174 KB

We have fabricated porous silicon layers (PSLs) in the anodizing solution, HF(48wt.\%): \(\mathrm{H}_{2} \mathrm{O}=1: 1\). After anodization, the PSL was etched in the same chemical solution as used for anodization and then illuminated with the \(476.5 \mathrm{~nm}\) line, with a power of \(20 \mat