Effects of process parameters on the growth of thick SiO2 using plasma enhanced chemical vapor deposition with hexamethyldisilazane
β Scribed by Jin-Kyung Choi; D.H. Kim; J. Lee; Ji-Beom Yoo
- Book ID
- 108422754
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 477 KB
- Volume
- 131
- Category
- Article
- ISSN
- 0257-8972
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
The paper presents the investigation of the effect of the process parameters on the structure of hydrogenated amorphous carbon (a-C:H) films deposited on Si(100) substrate by electron cyclotron resonance microwave plasma chemical vapor deposition method (ECR-PCVD). The investigation is based on an o
In this article plasma enhanced growth of single vertical carbon nanotubes (CNTs) from individual nickel catalyst dots is studied, aiming at the fabrication of CNT field emitters. It is found that the growth of individual CNTs differs from that of CNT forests grown from unpatterned catalyst films,