TiAlN films prepared using ion beam sputter deposition (IBSD) method are planed to be used as both the bottom electrode and diffusion barrier for a metal-insulator-metal (MIM) (Ba,Sr)TiO 3 (BST) capacitor in our study. We had shown the effects of ion beam voltage, substrate temperature on electrical
β¦ LIBER β¦
Effects of pressure on metal atom transport and plasma properties during arc ion plating of TiAlN
β Scribed by Junqing Lu; Jae Hong Yoon; Tong Yul Cho; Yun Kon Joo; Chan Gyu Lee
- Publisher
- TechnoPress
- Year
- 2007
- Tongue
- English
- Weight
- 187 KB
- Volume
- 13
- Category
- Article
- ISSN
- 1598-9623
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