๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Effects of oxygen partial pressure on the crystallographic structure of Mn-Zn ferrite thin films deposited by ion beam sputtering

โœ Scribed by Hae Seok Cho; Sang Ki Ha; Hyeong Joon Kim


Book ID
107930404
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
884 KB
Volume
68-69
Category
Article
ISSN
0257-8972

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Effects of nitrogen partial pressure on
โœ Sheng-Yi Lee; Sheng-Chang Wang; Jen-Sue Chen; Jow-Lay Huang ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 499 KB

TiAlN films prepared using ion beam sputter deposition (IBSD) method are planed to be used as both the bottom electrode and diffusion barrier for a metal-insulator-metal (MIM) (Ba,Sr)TiO 3 (BST) capacitor in our study. We had shown the effects of ion beam voltage, substrate temperature on electrical

Sputter etching effect of the substrate
โœ M. Sasase; K. Shimura; K. Yamaguchi; H. Yamamoto; S. Shamoto; K. Hojou ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 643 KB

Beta iron disilicide (b-FeSi 2 ) is one of the candidate materials for a compound semiconductor, which is promising for optoelectronic devices. b-FeSi 2 film has been obtained by ion beam sputter deposition (IBSD) on Si(1 0 0) substrates that are pre-treated by sputter etching by Ne + . In the prese