TiAlN films prepared using ion beam sputter deposition (IBSD) method are planed to be used as both the bottom electrode and diffusion barrier for a metal-insulator-metal (MIM) (Ba,Sr)TiO 3 (BST) capacitor in our study. We had shown the effects of ion beam voltage, substrate temperature on electrical
โฆ LIBER โฆ
Effects of oxygen partial pressure on the crystallographic structure of Mn-Zn ferrite thin films deposited by ion beam sputtering
โ Scribed by Hae Seok Cho; Sang Ki Ha; Hyeong Joon Kim
- Book ID
- 107930404
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 884 KB
- Volume
- 68-69
- Category
- Article
- ISSN
- 0257-8972
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Beta iron disilicide (b-FeSi 2 ) is one of the candidate materials for a compound semiconductor, which is promising for optoelectronic devices. b-FeSi 2 film has been obtained by ion beam sputter deposition (IBSD) on Si(1 0 0) substrates that are pre-treated by sputter etching by Ne + . In the prese