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Effects of material parameters on the temperature dependent spectral response of In0.83Ga0.17As photodetectors

✍ Scribed by Zhou, L.; Zhang, Y.G.; Gu, Y.; Ma, Y.J.; Chen, X.Y.; Xi, S.P.; Li, Hsby

Book ID
126453778
Publisher
Elsevier Science
Year
2015
Tongue
English
Weight
645 KB
Volume
619
Category
Article
ISSN
0925-8388

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Resistivity and Hall effect measurements on n-type undoped In 0.17 Ga 0.83 N alloy grown by metalorganic vapor phase epitaxy (MOVPE) technique were carried out as a function of temperature (15-350 K). In 0.17 Ga 0.83 N alloy is regarded as a highly degenerate semiconductor system with a high carrier