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Surface passivation of In0.83Ga0.17As photodiode with high-quality SiN layer fabricated by ICPCVD at the lower temperature

✍ Scribed by Wei, Peng; Li, Xue; Li, Tao; Tang, Hengjing; Deng, Honghai; Shi, Ming; Gong, Haimei


Book ID
122203889
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
541 KB
Volume
62
Category
Article
ISSN
1350-4495

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