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Effects of low-energy ion beam action on Ge/Si heteroepitaxy from molecular beam

✍ Scribed by A. V. Dvurechenskii; V. A. Zinovyev; V. A. Kudryavtsev; Zh. V. Smagina


Book ID
110124994
Publisher
SP MAIK Nauka/Interperiodica
Year
2000
Tongue
English
Weight
55 KB
Volume
72
Category
Article
ISSN
0021-3640

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Joint experimental and theoretical study of low-energy ion-beam-assisted Ge growth on Si has been carried out. Pulsed ion-beam action results in the increase of Ge nanoislands density and decrease of average island size and size dispersion. The effect is interpreted in terms of ion-beam-induced form

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Multilayers of Ge were deposited on (0 0 1) Si at low temperatures (250 and 300 C). The structural characterization was done by X-ray diffraction and reflectivity as well as by atomic force microscopy technics. The photoluminescence (PL) spectra reveal a quantum well (QW) emission that shifts to low