Joint experimental and theoretical study of low-energy ion-beam-assisted Ge growth on Si has been carried out. Pulsed ion-beam action results in the increase of Ge nanoislands density and decrease of average island size and size dispersion. The effect is interpreted in terms of ion-beam-induced form
β¦ LIBER β¦
Effects of low-energy ion beam action on Ge/Si heteroepitaxy from molecular beam
β Scribed by A. V. Dvurechenskii; V. A. Zinovyev; V. A. Kudryavtsev; Zh. V. Smagina
- Book ID
- 110124994
- Publisher
- SP MAIK Nauka/Interperiodica
- Year
- 2000
- Tongue
- English
- Weight
- 55 KB
- Volume
- 72
- Category
- Article
- ISSN
- 0021-3640
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