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Effects of ion implantation on the structures of silicon dioxide films made by various methods

โœ Scribed by B. I. Seleznev; G. Ya. Moskalev; V. A. Tkal'


Publisher
Springer US
Year
1981
Tongue
English
Weight
408 KB
Volume
34
Category
Article
ISSN
0021-9037

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Optical effects of doped top layers in s
โœ Yu Yuehui; Lin Chenglu; Zou Shichang ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Springer ๐ŸŒ English โš– 338 KB

Arsenic ions were implanted into silicon-on-insulator (SOl) structures at an incident energy of 100 keV to a dose of 2 x 10 lscm-z. Conductive top layers were formed in the SOl structures after annealing at 1200 ~ for 20 s. Infrared reflection spectra in the wave number range of 1500-5000 cm -1 were