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Effects of implantation conditions on the luminescence properties of Eu-doped GaN

✍ Scribed by Y. Nakanishi; A. Wakahara; H. Okada; A. Yoshida; T. Ohshima; H. Itoh; S. Nakao; K. Saito; Y.T. Kim

Book ID
114167258
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
153 KB
Volume
206
Category
Article
ISSN
0168-583X

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The influence of C, N, O, Mg, Si and co-implants (Mg+Si) ions implantation with fluences in the wide range 10 13 -10 17 cm Γ€2 on the yellow luminescence (YL) properties of wurtzite GaN has been studied by photoluminescence (PL) spectroscopy. Two types of n-type GaN samples grown by metal-organic che