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Effect of growth conditions on Eu3+ luminescence in GaN

✍ Scribed by R. Wang; A.J. Steckl

Book ID: 108166021
Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 471 KB
Volume: 312
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2009.12.033

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## Abstract GaN:Eu laser cavities have been fabricated by MBE growth on several substrates. Gain and loss from Eu stimulated emission have been investigated as a function of several process parameters: Eu concentration, post‐growth anneal and substrate (sapphire, silicon and glass). (© 2008 WILEY‐V