Effect of process conditions on gain and loss in GaN:Eu cavities on different substrates
β Scribed by Park, J. H. ;Steckl, A. J.
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 190 KB
- Volume
- 205
- Category
- Article
- ISSN
- 0031-8965
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β¦ Synopsis
Abstract
GaN:Eu laser cavities have been fabricated by MBE growth on several substrates. Gain and loss from Eu stimulated emission have been investigated as a function of several process parameters: Eu concentration, postβgrowth anneal and substrate (sapphire, silicon and glass). (Β© 2008 WILEYβVCH Verlag GmbH & Co. KGaA, Weinheim)
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