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Effect of process conditions on gain and loss in GaN:Eu cavities on different substrates

✍ Scribed by Park, J. H. ;Steckl, A. J.


Publisher
John Wiley and Sons
Year
2008
Tongue
English
Weight
190 KB
Volume
205
Category
Article
ISSN
0031-8965

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✦ Synopsis


Abstract

GaN:Eu laser cavities have been fabricated by MBE growth on several substrates. Gain and loss from Eu stimulated emission have been investigated as a function of several process parameters: Eu concentration, post‐growth anneal and substrate (sapphire, silicon and glass). (Β© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)


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