Effects of different ions implantation o
โ
W. You; X.D. Zhang; L.M. Zhang; Z. Yang; H. Bian; Q. Ge; W.X. Guo; W.X. Wang; Z.
๐
Article
๐
2008
๐
Elsevier Science
๐
English
โ 188 KB
The influence of C, N, O, Mg, Si and co-implants (Mg+Si) ions implantation with fluences in the wide range 10 13 -10 17 cm ร2 on the yellow luminescence (YL) properties of wurtzite GaN has been studied by photoluminescence (PL) spectroscopy. Two types of n-type GaN samples grown by metal-organic che