Effects of high doping on the bandgap bowing for AlxGa1−xN

✍ Scribed by N. Safta; H. Mejri; H. Belmabrouk; M.A. Zaïdi

• Book ID: 104051236
• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 125 KB
• Volume: 37
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/j.mejo.2006.07.010

✦ Synopsis

This paper gives the composition dependence of the bandgap energy for highly doped n-type Al x Ga 1Àx N. We report results of the bowing parameter obtained using a random simulation. Three groups of Al x Ga 1Àx N semiconductors were considered and which are distinguishable by their non degenerate or degenerate character in the doping density (10 17 pN D p10 20 cm À3 ). A striking feature is the large discrepancy of the bandgap bowing (À2.02pbp2.94 eV), as was demonstrated from our calculations. This suggests that high doping may be a possible cause able to induce the large range of bowing parameters reported for Al x Ga 1Àx N alloys.