Evaluation of electroless deposited Co(W
โ
A. Kohn; M. Eizenberg; Y. Shacham-Diamand; B. Israel; Y. Sverdlov
๐
Article
๐
2001
๐
Elsevier Science
๐
English
โ 231 KB
Electroless deposited Co(W,P) thin films were evaluated as diffusion barriers for copper metallization. Capacitance versus time measurements of MOS structures as well as SIMS depth profiles indicate that 30-nm-thick films can function as effective barriers against copper diffusion after thermal trea