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Effects of growth temperature and arsenic pressure on size distribution and density of InAs quantum dots on Si (001)

✍ Scribed by Z.M. Zhao; O. Hul'ko; H.J. Kim; J. Liu; B. Shi; Y.H. Xie

Book ID
108287781
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
191 KB
Volume
483
Category
Article
ISSN
0040-6090

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## Abstract In this study, we have attempted a growth of InSb film on the cost‐effective, (001)‐Si substrate inserting a thin intermediate‐layer of InAs quantum dots (QDs) at the InSb/Si interface. Analysis of the interface region using transmission electron microscopy reveals that, during the subs