Effects of growth conditions on the formation of self-assembled InAs quantum dots grown on (115)A GaAs substrate
β Scribed by Bennour, M.; Saidi, F.; Bouzaiene, L.; Sfaxi, L.; Maaref, H.
- Book ID
- 120830817
- Publisher
- Elsevier Science
- Year
- 2013
- Tongue
- English
- Weight
- 439 KB
- Volume
- 50
- Category
- Article
- ISSN
- 1386-9477
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The authors report the formation of self-assembled InAs quantum dots (QDs) grown on GaAs/Ge substrates having anti-phase domains (APDs) by molecular beam epitaxy. The AFM images of InAs QDs grown on different GaAs thicknesses are shown and compared. The samples with InAs coverage of 1.80 MLs with Ga
In this work we have studied the optical properties of InAs quantum dots (QDs) grown by molecular-beam epitaxy on GaAs (211)A, on (n11)A/B (where n is 1, 5 and 7), and on reference (100) substrates. Investigation of orientation and polarity effects by means of photoluminescence (PL) are also present