𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Effects of growth conditions on the formation of self-assembled InAs quantum dots grown on (115)A GaAs substrate

✍ Scribed by Bennour, M.; Saidi, F.; Bouzaiene, L.; Sfaxi, L.; Maaref, H.


Book ID
120830817
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
439 KB
Volume
50
Category
Article
ISSN
1386-9477

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Self-assembled InAs quantum dots on anti
✍ W. Tantiweerasophon; S. Thainoi; P. Changmuang; S. Kanjanachuchai; S. Rattanatha πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 664 KB

The authors report the formation of self-assembled InAs quantum dots (QDs) grown on GaAs/Ge substrates having anti-phase domains (APDs) by molecular beam epitaxy. The AFM images of InAs QDs grown on different GaAs thicknesses are shown and compared. The samples with InAs coverage of 1.80 MLs with Ga

Optical properties of self-assembled InA
✍ P.P. GonzΓ‘lez-Borrero; E. Marega Jr; D.I. Lubyshev; E. Petitprez; P. Basmaji πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 136 KB

In this work we have studied the optical properties of InAs quantum dots (QDs) grown by molecular-beam epitaxy on GaAs (211)A, on (n11)A/B (where n is 1, 5 and 7), and on reference (100) substrates. Investigation of orientation and polarity effects by means of photoluminescence (PL) are also present