The e ects of desorption and di usion of indium adatoms on the photoluminescence (PL) from InAs self-assembled quantum dots (QDs) are investigated by introducing growth interruptions after QD formation. Large, low-density and small, high-density QDs were grown by molecular beam epitaxy using low (0:
Influence of growth conditions on the photoluminescence of self-assembled InAs/GaAs quantum dots
✍ Scribed by Chu, L.; Arzberger, M.; BoÌhm, G.; Abstreiter, G.
- Book ID
- 119993955
- Publisher
- American Institute of Physics
- Year
- 1999
- Tongue
- English
- Weight
- 629 KB
- Volume
- 85
- Category
- Article
- ISSN
- 0021-8979
- DOI
- 10.1063/1.369549
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum
## Abstract We report the effect of defects that appear during capping layer growth or are introduced intentionally, on the photoluminescence (PL) properties of InAs strained quantum dots. A treatment of the samples with CCl~4~ during the growth leads to the reduction of native defect concentration