𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Influence of growth conditions on the photoluminescence of self-assembled InAs/GaAs quantum dots

✍ Scribed by Chu, L.; Arzberger, M.; Böhm, G.; Abstreiter, G.


Book ID
119993955
Publisher
American Institute of Physics
Year
1999
Tongue
English
Weight
629 KB
Volume
85
Category
Article
ISSN
0021-8979

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Photoluminescence linewidth narrowing of
✍ S Kiravittaya; Y Nakamura; O.G Schmidt 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 151 KB

The e ects of desorption and di usion of indium adatoms on the photoluminescence (PL) from InAs self-assembled quantum dots (QDs) are investigated by introducing growth interruptions after QD formation. Large, low-density and small, high-density QDs were grown by molecular beam epitaxy using low (0:

Photoluminescence studies of self-assemb
✍ X. Mu; Y. J. Ding; Z. Wang; G. J. Salamo 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 398 KB

We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum

Influence of matrix defects on the photo
✍ Chahboun, A. ;Baidus, N. V. ;Demina, P. B. ;Zvonkov, B. N. ;Gomes, M. J. M. ;Cav 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 161 KB

## Abstract We report the effect of defects that appear during capping layer growth or are introduced intentionally, on the photoluminescence (PL) properties of InAs strained quantum dots. A treatment of the samples with CCl~4~ during the growth leads to the reduction of native defect concentration