✦ LIBER ✦

Effects of different insertion layer thicknesses on structural and optical properties of GaN/Al 0.5 Ga 0.5 N/GaN coupled multiquantum wells

✍ Scribed by Park, Y S; Park, C M; Im, Hyunsik; Kang, T W; Oh, Jae-Eung

Book ID: 120614363
Publisher: Institute of Physics
Year: 2005
Tongue: English
Weight: 345 KB
Volume: 20
Category: Article
ISSN: 0268-1242
DOI: 10.1088/0268-1242/20/12/L01

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effect of an (Al,In)N insertion layer on

Effect of an (Al,In)N insertion layer on the radiative emission properties of (In,Ga)N/GaN multiple quantum well structures

✍ Monemar, B. ;Paskov, P. P. ;Bergman, J. P. ;Keller, S. ;DenBaars, S. P. ;Mishra, 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 225 KB

## Abstract As an effort to investigate new techniques to reduce the effect of the strong internal polarization fields in (In,Ga)N/GaN quantum well (QW) structures we have studied the influence of inserting a thin wide bandgap Al~0.95~In~0.05~N interlayer inside the QWs, in order to modify the pote

Effects of ain buffer layer on crystallo

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

✍ Isamu Akasaki; Hiroshi Amano; Yasuo Koide; Kazumasa Hiramatsu; Nobuhiko Sawaki 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 887 KB