Effect of an (Al,In)N insertion layer on the radiative emission properties of (In,Ga)N/GaN multiple quantum well structures

✍ Scribed by Monemar, B. ;Paskov, P. P. ;Bergman, J. P. ;Keller, S. ;DenBaars, S. P. ;Mishra, U. K.

• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 225 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200673581

✦ Synopsis

Abstract

As an effort to investigate new techniques to reduce the effect of the strong internal polarization fields in (In,Ga)N/GaN quantum well (QW) structures we have studied the influence of inserting a thin wide bandgap Al~0.95~In~0.05~N interlayer inside the QWs, in order to modify the potential and increase the electron–hole overlap. A strong reduction of the decay times of the photoluminescence (PL) was observed in this case at all temperatures up to 300 K, without a strong reduction in PL intensity. The tunneling electron–hole transition across the interlayer is observed to be dominant at room temperature for high excitation conditions. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)