Praseodymium oxide-based dielectric thin films have been grown using metal-organic chemical vapor deposition (MOCVD) technique on pand n-type Si (0 0 1) substrates. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses have revealed that depositions at 750 • C in 1.33 × 10 -1 Pa oxygen partial pressure have produced Pr 2 O 3 films with a praseodymium silicate bottom layer. The influence of deposition temperature has been evaluated carrying out deposition experiments in the 450-850 • C range. The structural characterization of praseodymium oxide-based films has been performed using X-ray diffraction and transmission electron microscopy (TEM). Films deposited in the low deposition temperature range (450-650 • C) are quite amorphous and the praseodymium silicate bottom layer thickness is smaller than in the case of high temperature deposited films. In the 650-850 • C deposition temperature range hexagonal Pr 2 O 3 polycrystalline films have been grown. Finally, the electrical properties of both amorphous and polycrystalline praseodymium oxide films have been investigated and compared.