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Effects of deep centers at Pt/Si interfaces and hydrogenation

✍ Scribed by C.C. Hsu; S.A. Ding; L.W. Lu; J. Zhou

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
228 KB
Volume
70-71
Category
Article
ISSN
0169-4332

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We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO 2 interface of metal-oxide-semiconductor field effect transistors. With ab initio density functional calculations, the energetics and defect levels have been calculated for hydrogen in bulk si