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The effect of Pt impurity at the NiCr/Si interface on the growth of amorphous Cr layer during annealing

โœ Scribed by Ju-Hyeon Lee

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
582 KB
Volume
256
Category
Article
ISSN
0040-6090

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In order to understand the growth mechanism of the silicides and the effect of the dopant on the electrical activity, a thin layer of chromium (100 nm) is deposited on the single crystal silicon (1 0 0) substrate implanted (10 15 As + atoms/cm 2 , 100 keV) and non implanted. Afterwards, we performed