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Effects of contact geometry in wide Hall bars

✍ Scribed by Howwen Jou; Wun Tsang; A.M. Kriman

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
237 KB
Volume
92
Category
Article
ISSN
0169-4332

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We investigate the Quantum Hall Effect (QHE) in selectively boron-doped \(\mathrm{GeSi} /(111) \mathrm{Ge}\) multi-quantum well (MQW) samples of non standard geometry with six-point contacts disconnected from the sample edges. The Hall resistance shows a well-pronounced quantisation that is consiste