Effects of confinement on shallow donors and acceptors in GaAs/AlGaAs quantum wells
β Scribed by Reeder, A.A.; Mercy, J.-M.; McCombe, B.D.
- Book ID
- 117869040
- Publisher
- IEEE
- Year
- 1988
- Tongue
- English
- Weight
- 888 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0018-9197
- DOI
- 10.1109/3.7099
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π SIMILAR VOLUMES
Polarizabilities of shallow donors and acceptors in infinite-barrier GaAs/Ga \V Al V As quantum wells have been calculated using the Hasse variational method within the effective mass approximation. The effect of spatially dependent screening on polarizabilities is taken into account with an r-depen
Saturation of the D 0 1s-2p + transition, the D --singlet transition and CR has been studied in donor (Si)-doped GaAs/AlGaAs multiple-quantum-well samples by magneto-transmission and magneto-photoconductivity measurements with the UCSB free electron laser. Effective lifetimes of the D 0 1s-2p + tran