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Effects of composition and thickness of TiN metal gate on the equivalent oxide thickness and flat-band voltage in metal oxide semiconductor devices

✍ Scribed by Lee, Seok-Hee; Choi, Rino; Choi, Changhwan

Book ID: 121379956
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 695 KB
Volume: 109
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2013.03.056

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