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Effects of CeO2buffer layer on the dielectric properties of Ba0.6Sr0.4TiO3thin films prepared by sol–gel processing

✍ Scribed by Bian, Yanlong; Zhai, Jiwei


Book ID
121555806
Publisher
Springer
Year
2013
Tongue
English
Weight
777 KB
Volume
69
Category
Article
ISSN
0928-0707

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An alkoxide-based sol-gel method was used to fabricate Ba Sr TiO thin films doped by Bi from 5 to 20 0.6 0.4 3 mol% on a Pt / Ti / SiO / Si substrate. The structural and dielectric properties of BST thin films were investigated 2 as a function of Bi dopant concentration. The dielectric properties of