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Effects of annealing processing on morphological, compositional and Schottky characterization of PtSi/Si diodes

✍ Scribed by M.C Li; L.C Zhao; X.H Zhen; X.K Chen

Book ID
117357674
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
287 KB
Volume
57
Category
Article
ISSN
0167-577X

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Nickel-silicided/Si 1Γ€x Ge x Schottky junctions are fabricated by annealing the deposited nickel (Ni) film on relaxed Si 0.75 Ge 0.25 layer at a temperature range of 300-900 1C for 60 s. Energy dispersive spectroscopy (EDS) was used to quantify the Ge composition in silicide/germanosilicide grains,