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Effects of annealing on the hydrogen concentration and the performance of InGaP/InGaAsN/GaAs heterojunction bipolar transistors

✍ Scribed by Y. M. Hsin; H. T. Hsu; K. P. Hseuh; W. B. Tang; C. C. Fan; C. H. Wang; C. W. Chen; N. Y. Li

No coin nor oath required. For personal study only.

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