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Effects of annealing on structural and electrical properties of sub-micron thick CIGS films

✍ Scribed by Ko, Byoung Soo (author);Sung, Shi Joon (author);Kim, Dae Hwan (author);Lee, Dong Ha (author);Hwang, Dae Kue (author)


Book ID
120339219
Publisher
Elsevier B.V.
Year
2013
Tongue
English
Weight
686 KB
Volume
13
Category
Article
ISSN
1567-1739

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Effects of thermal annealing on structur
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In this work we have studied the influence of thermal annealing on the structural and electrical properties of W-Ti thin films, deposited on n-type (100) silicon wafers. The films were deposited by d.c. sputtering from a 90:10 wt.% W-Ti target, using Ar ions, to a thickness of ~170 nm. After deposit