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Effective-mass theory for InAs/GaAs strained superlattices

โœ Scribed by Shu-shen, Li; Jian-bai, Xia


Book ID
120460224
Publisher
IOP Publishing
Year
1997
Tongue
English
Weight
664 KB
Volume
6
Category
Article
ISSN
1004-423X

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๐Ÿ“œ SIMILAR VOLUMES


Band discontinuity in GaAs/AlAs superlat
โœ T. Saito; Y. Hashimoto; T. Ikoma ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 128 KB

We have theoretically investigated the valence-band discontinuity \(\left(\Delta E_{v}\right)\) at the (100) GaAs/AlAs interface with the InAs strained insertion-layer. The theoretical calculation is carried out by the self-consistent tight-binding method with the \(s p^{3} s^{*}\) basis in the \((\