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Effect of γ-rays on the spectrum of defects in an irradiated material

✍ Scribed by V. A. Nikolaenko; V. I. Karpukhin

Book ID
105566207
Publisher
Springer US
Year
1996
Tongue
English
Weight
382 KB
Volume
80
Category
Article
ISSN
1573-8205

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g-irradiation induced defects ( 60 Co, dose of 3 Â 10 19 cm À2 ) in n-GaN epilayers with a carrier concentration of 10 17 cm À3 (slightly doped) and 10 18 cm À3 (heavily doped) grown by low-pressure MOCVD on (0001) sapphire substrates have been investigated. The g-irradiation decreases the electron