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Effect of irradiation temperature on radiation γ-annealing of defects

✍ Scribed by V. A. Nikolaenko; V. I. Karpukhin; V. G. Gordeev; V. N. Kuznetsov

Publisher
Springer US
Year
1996
Tongue
English
Weight
161 KB
Volume
80
Category
Article
ISSN
1573-8205

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✍ N.M. Shmidt; D.V. Davydov; V.V. Emtsev; I.L. Krestnikov; A.A. Lebedev; W.V. Lund 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 123 KB 👁 1 views

g-irradiation induced defects ( 60 Co, dose of 3 Â 10 19 cm À2 ) in n-GaN epilayers with a carrier concentration of 10 17 cm À3 (slightly doped) and 10 18 cm À3 (heavily doped) grown by low-pressure MOCVD on (0001) sapphire substrates have been investigated. The g-irradiation decreases the electron