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Effect of threading dislocation density on Ni/n-GaN Schottky diode I-V characteristics

✍ Scribed by Arehart, A. R.; Moran, B.; Speck, J. S.; Mishra, U. K.; DenBaars, S. P.; Ringel, S. A.

Book ID
118166753
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
780 KB
Volume
100
Category
Article
ISSN
0021-8979

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## Abstract InGaN light‐emitting diodes (LEDs) on GaN substrates with low threading dislocation densities (TDDs) were fabricated, and the characteristics of the LEDs were compared with those on sapphire substrates. LEDs with 3 nm‐thick‐quantum‐wells (QWs) grown on GaN as well as on sapphire substra