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Effect of the surface on ion-beam damage build-up in ZnO

✍ Scribed by M.T. Myers; S. Charnvanichborikarn; L. Shao; S.O. Kucheyev


Book ID
113899505
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
275 KB
Volume
67
Category
Article
ISSN
1359-6462

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## Abstract The medium range implantation of rare earth ions at room temperature in GaN layers leads to the formation of point defect clusters, basal and prismatic stacking faults from the lowest fluence. When a threshold fluence of about 3 Γ— 10^15^ at/cm^2^ is reached, a highly disordered β€˜nanocry