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Effect of the spatial distribution of SiO2 thickness on the switching behavior of bistable MOS tunnel structures

✍ Scribed by S.E. Tyaginov; M.I. Vexler; A.F. Shulekin; I.V. Grekhov

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
319 KB
Volume
83
Category
Article
ISSN
0167-9317

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