Effect of substrate porosity on photoluminescence properties of ZnS films prepared on porous Si substrates by pulsed laser deposition
โ Scribed by Cai-feng Wang; Qing-shan Li; Li-chun Zhang; Lei Lv; Hong-xia Qi
- Book ID
- 107509320
- Publisher
- Tianjin University of Technology
- Year
- 2007
- Tongue
- English
- Weight
- 196 KB
- Volume
- 3
- Category
- Article
- ISSN
- 1673-1905
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Lead titanate (PbTiO 3 ) thin films were prepared on platinised silicon substrates by pulsed laser deposition. A predominantly (1 1 1) oriented perovskite phase was obtained at a substrate temperature of 530 โข C. Deposition at higher substrate temperatures resulted in the formation of a lead deficie
Transparent conducting ZnMgO:Ga films were deposited on flexible PET substrates by pulsed laser deposition (PLD). Effects of deposition pressure and time on the structural, electrical and optical properties of ZnMgO:Ga films were investigated. The films showed a low resistivity about 7.68 ร 10 ร4 V
Al-doped ZnO (ZnO:Al) thin films were deposited on Si substrates using the radio-frequency reactive magnetron sputtering technique. Effect of Al contents and annealing treatments on the structural and photoluminescence (PL) properties of ZnO films was investigated. The results showed that crystallin